The influence of bandgap narrowing and impurity deionization on the characteristics of silicon bipolar microwave transistors

  • Jun-ye Mao
  • Published 1980 in 1980 International Electron Devices Meeting

Abstract

The emitter regions of Silicon bipolar microwave transistors are usually heavily doped. The magnitude and distribution of impurity concentrations of the emitter and base regions depend upon the designs and technologies of the transistors. Both the bandgap narrowing and the impurity deionization have influence on majority carrier concentrations, minority… (More)

Cite this paper

@article{Mao1980TheIO, title={The influence of bandgap narrowing and impurity deionization on the characteristics of silicon bipolar microwave transistors}, author={Jun-ye Mao}, journal={1980 International Electron Devices Meeting}, year={1980}, pages={838-840} }