The impact of layout dependent stress and gate resistance on high frequency performance and noise in multifinger and donut MOSFETs

@article{Ku2013TheIO,
  title={The impact of layout dependent stress and gate resistance on high frequency performance and noise in multifinger and donut MOSFETs},
  author={C. Y. Ku and Kuo-Ling Yeh and Jyh-Chyurn Guo},
  journal={2013 IEEE MTT-S International Microwave Symposium Digest (MTT)},
  year={2013},
  pages={1-3}
}
The impact of STI stress on mobility and resulted transconductance (g<sub>m</sub>) degradation appear as a penalty of multi-finger devices for RF and analog design. Donut device layout is proposed to eliminate the STI transverse stress and achieve higher g<sub>m</sub>. Both NMOS and PMOS can benefit from the donut layout, with higher cut-off frequency (f<sub>T</sub>). However, the layout dependence of g<sub>m</sub> and gate resistance (R<sub>g</sub>) becomes a critical trade-off in determining… CONTINUE READING