The growth and electrical properties of single crystal Cd3As2 platelets

@article{Lovett1972TheGA,
  title={The growth and electrical properties of single crystal Cd3As2 platelets},
  author={D. R. Lovett},
  journal={Journal of Materials Science},
  year={1972},
  volume={7},
  pages={388-392}
}
  • D. Lovett
  • Published 1 April 1972
  • Materials Science
  • Journal of Materials Science
Single crystal platelets of Cd3As2 having carrier concentrations less than 1024 m−3 have been grown from the vapour in the presence of argon gas and excess cadmium vapour. It is shown that the resistivity and Hall data is consistent with a band model in which there is a direct band-gap atk=0 of approximately 0.38 eV and an indirect zero band-gap. It is suggested that the large electron carrier concentrations usually present in Cd3As2 result from anti-structure disorder. 
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