The growth and electrical properties of single crystal Cd3As2 platelets

@article{Lovett1972TheGA,
  title={The growth and electrical properties of single crystal Cd3As2 platelets},
  author={D. R. Lovett},
  journal={Journal of Materials Science},
  year={1972},
  volume={7},
  pages={388-392}
}
  • D. Lovett
  • Published 1 April 1972
  • Materials Science
  • Journal of Materials Science
Single crystal platelets of Cd3As2 having carrier concentrations less than 1024 m−3 have been grown from the vapour in the presence of argon gas and excess cadmium vapour. It is shown that the resistivity and Hall data is consistent with a band model in which there is a direct band-gap atk=0 of approximately 0.38 eV and an indirect zero band-gap. It is suggested that the large electron carrier concentrations usually present in Cd3As2 result from anti-structure disorder. 
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17 Citations

17 Citations

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THE ENERGY-BAND PARAMETERS OF CADMIUM ARSENIDE AND THEIR VARIATION WITH TEMPERATURE AND PRESSURE.
Magnetic Field‐Enhanced Thermoelectric Performance in Dirac Semimetal Cd3As2 Crystals with Different Carrier Concentrations
The magneto‐thermoelectric figure of merit (ZT) in crystals of the topological Dirac semimetal Cd3As2 with different carrier concentrations is studied. The ZTs for all the crystals increase with the…
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Several groups of narrow gap semiconductors have become particularly interesting in the fields of pure science and technology. Among these are some of the mercury, cadmium and lead compounds and some…
Experimental realization of a three-dimensional Dirac semimetal.
TLDR
The direct observation of the three-dimensional (3D) Dirac semimetal phase in cadmium arsenide by means of angle-resolved photoemission spectroscopy is reported, and it is proved the existence of the long sought 3D Dirac points.
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