• DOI:10.1016/S0040-6090(00)00825-7
Corpus ID: 96246194

The formation of silicon (111) boron surface phases and their influence on the epitaxial growth of silicon and germanium

@article{Schulze2000TheFO,
  title={The formation of silicon (111) boron surface phases and their influence on the epitaxial growth of silicon and germanium},
  author={J. Schulze and H. Baumg{\"a}rtner and C. Fink and G. Dollinger and I. Gentchev and L. Goergens and W. Hansch and H. Hoster and T. Metzger and R. Paniago and T. Stimpel and T. Sulima and I. Eisele},
  journal={Thin Solid Films},
  year={2000},
  volume={369},
  pages={10-15}
}

• J. Schulze, H. Baumgärtner, +10 authors I. Eisele
• Published 2000
• Materials Science
• Thin Solid Films

We present results obtained by different analysis methods as scanning tunneling microscopy (STM), atomic force microscopy (AFM), grazing incidence small angle X-ray scattering (GISAXS), and elastic recoil detection (ERD) on two similar semiconductor structures grown by molecular beam epitaxy (1) Si(111) substrate/Si buffer layer/B layer with σ B = (2.6 + 8) × 10 14 cm -2 /Ge cap layer and (2) Si(111) substrate/Si buffer layer/B layer with σ B = (2.6 ± δ) × 10 14 cm -2 /Si cap layer. It will be… Expand

View via Publisher

Save to Library

Create Alert

Cite

Launch Research Feed