The formation of silicon (111) boron surface phases and their influence on the epitaxial growth of silicon and germanium

@article{Schulze2000TheFO,
  title={The formation of silicon (111) boron surface phases and their influence on the epitaxial growth of silicon and germanium},
  author={J. Schulze and H. Baumg{\"a}rtner and C. Fink and G. Dollinger and I. Gentchev and L. Goergens and W. Hansch and H. Hoster and T. Metzger and R. Paniago and T. Stimpel and T. Sulima and I. Eisele},
  journal={Thin Solid Films},
  year={2000},
  volume={369},
  pages={10-15}
}
We present results obtained by different analysis methods as scanning tunneling microscopy (STM), atomic force microscopy (AFM), grazing incidence small angle X-ray scattering (GISAXS), and elastic recoil detection (ERD) on two similar semiconductor structures grown by molecular beam epitaxy (1) Si(111) substrate/Si buffer layer/B layer with σ B = (2.6 + 8) × 10 14 cm -2 /Ge cap layer and (2) Si(111) substrate/Si buffer layer/B layer with σ B = (2.6 ± δ) × 10 14 cm -2 /Si cap layer. It will be… Expand
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References

SHOWING 1-9 OF 9 REFERENCES
Adsorption of boron on Si(111): Its effect on surface electronic states and reconstruction.
  • 178
Surface doping and stabilization of Si(111) with boron.
  • 166
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