• DOI:10.1016/S0040-6090(00)00825-7
Corpus ID: 96246194

The formation of silicon (111) boron surface phases and their influence on the epitaxial growth of silicon and germanium

@inproceedings{Schulze2000TheFO,
  title={The formation of silicon (111) boron surface phases and their influence on the epitaxial growth of silicon and germanium},
  author={J{\"o}rg Schulze and H. Baumg{\"a}rtner and C. Fink and G{\"u}nther Dollinger and Ivan N. Gentchev and Lutz Goergens and Walter Hansch and Harry Ernst Hoster and Till Hartmut Metzger and Rog{\'e}rio Magalhaes Paniago and Thomas Stimpel and T. G. Sulima and Ignaz Eisele},
  year={2000}
}

Jörg Schulze, H. Baumgärtner, +10 authors Ignaz Eisele

Published 2000

Materials Science

We present results obtained by different analysis methods as scanning tunneling microscopy (STM), atomic force microscopy (AFM), grazing incidence small angle X-ray scattering (GISAXS), and elastic recoil detection (ERD) on two similar semiconductor structures grown by molecular beam epitaxy (1) Si(111) substrate/Si buffer layer/B layer with σ B = (2.6 + 8) × 10 14 cm -2 /Ge cap layer and (2) Si(111) substrate/Si buffer layer/B layer with σ B = (2.6 ± δ) × 10 14 cm -2 /Si cap layer. It will be… CONTINUE READING

View via Publisher

Save to Library

Create Alert

Cite

Launch Research Feed

Create an AI-powered research feed to stay up to date with new papers like this posted to ArXiv