The formation of silicon (111) boron surface phases and their influence on the epitaxial growth of silicon and germanium

@inproceedings{Schulze2000TheFO,
  title={The formation of silicon (111) boron surface phases and their influence on the epitaxial growth of silicon and germanium},
  author={J{\"o}rg Schulze and H. Baumg{\"a}rtner and C. Fink and G{\"u}nther Dollinger and Ivan N. Gentchev and Lutz Goergens and Walter Hansch and Harry Ernst Hoster and Till Hartmut Metzger and Rog{\'e}rio Magalhaes Paniago and Thomas Stimpel and T. G. Sulima and Ignaz Eisele},
  year={2000}
}
  • Jörg Schulze, H. Baumgärtner, +10 authors Ignaz Eisele
  • Published 2000
  • Materials Science
  • We present results obtained by different analysis methods as scanning tunneling microscopy (STM), atomic force microscopy (AFM), grazing incidence small angle X-ray scattering (GISAXS), and elastic recoil detection (ERD) on two similar semiconductor structures grown by molecular beam epitaxy (1) Si(111) substrate/Si buffer layer/B layer with σ B = (2.6 + 8) × 10 14 cm -2 /Ge cap layer and (2) Si(111) substrate/Si buffer layer/B layer with σ B = (2.6 ± δ) × 10 14 cm -2 /Si cap layer. It will be… CONTINUE READING

    Create an AI-powered research feed to stay up to date with new papers like this posted to ArXiv

    Citations

    Publications citing this paper.

    Complementary Tunneling-FETs (CTFET) in CMOS Technology

    VIEW 17 EXCERPTS
    CITES METHODS
    HIGHLY INFLUENCED