The formation of silicon (111) boron surface phases and their influence on the epitaxial growth of silicon and germanium
@article{Schulze2000TheFO, title={The formation of silicon (111) boron surface phases and their influence on the epitaxial growth of silicon and germanium}, author={J. Schulze and H. Baumg{\"a}rtner and C. Fink and G. Dollinger and I. Gentchev and L. Goergens and W. Hansch and H. Hoster and T. Metzger and R. Paniago and T. Stimpel and T. Sulima and I. Eisele}, journal={Thin Solid Films}, year={2000}, volume={369}, pages={10-15} }
We present results obtained by different analysis methods as scanning tunneling microscopy (STM), atomic force microscopy (AFM), grazing incidence small angle X-ray scattering (GISAXS), and elastic recoil detection (ERD) on two similar semiconductor structures grown by molecular beam epitaxy (1) Si(111) substrate/Si buffer layer/B layer with σ B = (2.6 + 8) × 10 14 cm -2 /Ge cap layer and (2) Si(111) substrate/Si buffer layer/B layer with σ B = (2.6 ± δ) × 10 14 cm -2 /Si cap layer. It will be… Expand
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References
SHOWING 1-9 OF 9 REFERENCES
An in-situ high temperature scanning tunnelling microscopy study of the boron-induced √3 × √3 reconstruction on the Si(111) surface
- Materials Science
- 1995
- 14
Silicon-germanium molecular beam epitaxy system for high-quality nanostructures and devices
- Materials Science
- 1998
- 8
Formation of buried a-Si/Al/Si, a-Si/Sb/Si and a-Si/B/Si interfaces and their electrical properties
- Materials Science
- 1995
- 5
Stability of surface reconstructions on silicon during RT deposition of Si submonolayers
- Materials Science
- 1995
- 8
Adsorption of boron on Si(111): Its effect on surface electronic states and reconstruction.
- Physics, Medicine
- Physical review letters
- 1989
- 178
Surface doping and stabilization of Si(111) with boron.
- Physics, Medicine
- Physical review letters
- 1989
- 166
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