The formation of Er-oxide nanoclusters in SiO2 thin films with excess Si

@article{Thgersen2009TheFO,
  title={The formation of Er-oxide nanoclusters in SiO2 thin films with excess Si},
  author={Annett Th{\o}gersen and Jeyanthinath Mayandi and Terje G. Finstad and A. Olsen and Spyros Diplas and Masanori Mitome and Yoshio Bando},
  journal={Journal of Applied Physics},
  year={2009},
  volume={106},
  pages={014305}
}
The nucleation, distribution, and composition of erbium embedded in a SiO2–Si layer were studied with high resolution transmission electron microscopy (TEM), electron energy loss spectroscopy, energy filtered TEM, scanning transmission electron microscopy, and x-ray photoelectron spectroscopy. When SiO2 layer contains small amounts of Si and Er, nanoclusters of Er oxide are formed throughout the whole layer. The exposure of oxide to an electron beam with 1.56×106 electrons nm2 s causes… 

Figures from this paper

Composition and structure of Pd nanoclusters in SiO$_x$ thin film
The nucleation, distribution, composition and structure of Pd nanocrystals in SiO$_2$ multilayers containing Ge, Si, and Pd are studied using High Resolution Transmission Electron Microscopy (HRTEM)
Direct Insight into Ce-Silicates/Si-Nanoclusters Snowman-Like Janus Nanoparticles Formation in Ce-Doped SiOx Thin Layers
The present work reports a nanoscale chemical and structural study on the influence of Ce content in Ce-doped SiO1.5 thin films via atom probe tomography (APT). Using this technique, we can explore
Atomic scale investigation of Si and Ce‐rich nanoclusters in Ce‐doped SiO1.5 thin films
The optical properties and the nanoscale structure of Ce-doped SiO1.5 thin films elaborated by evaporation were investigated by photoluminescence and atom probe tomography. Strong Ce-related blue
Nanoscale evidence of erbium clustering in Er-doped silicon-rich silica
TLDR
The evolution of the nanoscale structure upon an annealing treatment was found to control the interrelation between the radiative recombination of the carriers via Si clusters and via 4f shell transitions in Er3+ ions.
On the interplay between SiErO segregation and erbium silicate ( Er 2 Si 2 O 7 ) formation in Er-doped SiO x thin films
Er-doped silica or rich-silicon oxide has been widely studied as 1.54 mm emitters. The incorporation of Sinanoclusters is known for improving luminescence yield of Er3þ ions through an efficient
On the interplay between Si-Er-O segregation and erbium silicate (Er2Si2O7) formation in Er-doped SiOx thin films
Er-doped silica or rich-silicon oxide has been widely studied as 1.54 mm emitters. The incorporation of Si-nanoclusters is known for improving luminescence yield of Er 3þ ions through an efficient
Sensitizing properties of luminescence centers on the emission of Er3+ in Si-rich SiO2 film
In this paper, we report on the luminescence-center (LC)-mediated excitation of Er3+ as a function of annealing temperature in Er-doped Si-rich SiO2 (SRO) films fabricated by electron beam
Optical and structural characterization of thermal oxidation effects of erbium thin films deposited by electron beam on silicon
Thermal oxidation effects on the structural, compositional, and optical properties of erbium films deposited on silicon via electron beam evaporation were analyzed by x-ray diffraction, x-ray
Structural and optoelectronic properties of rare earth doped silicon photonic materials
The thesis presented here entitled ?Structural and Optoelectronic Properties of Rare Earth Doped Silicon Photonic Materials? for the degree of Doctor of Philosophy is submitted to the University of

References

SHOWING 1-10 OF 24 REFERENCES
An experimental study of charge distribution in crystalline and amorphous Si nanoclusters in thin silica films
Crystalline and amorphous nanoparticles of silicon in thin silica layers were examined by transmission electron microscopy, electron energy loss spectroscopy, and x-ray photoelectron spectroscopy
Interaction between rare-earth ions and amorphous silicon nanoclusters produced at low processing temperatures
Abstract Temperatures of 1000 °C and higher are a significant problem for the incorporation of erbium-doped silicon nanocrystal devices into standard silicon technology, and make the fabrication of
Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers
The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentrations (28–70 area %) have been studied using transmission electron microscopy
Erbium-doped silicon nanocrystals grown by r.f. sputtering method: Competition between oxygen and silicon to get erbium
Abstract Erbium doped micro- and nanocrystalline silicon thin films have been deposited by co-sputtering of Er and Si. Films with different crystallinity, crystallite size, hydrogen and oxygen
1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+
SiO2 films containing Si nanocrystals (nc-Si) and Er were prepared and their photoluminescence (PL) properties were studied. The samples exhibited luminescence peaks at 0.81 and 1.54 μm, which could
Photoluminescence thermal quenching behaviors of Er-doped SiOx (x<2) prepared by ion implantation
Abstract Erbium and silicon were implanted into thermally grown SiO2 film on Si (1 1 0) substrates, followed by thermal treatment at 700–1200 °C for 30 min. The microstructure was studied by using
Epitaxial growth of Er2O3 films on oxidized Si(111) and Si(001) substrates
The crystalline structures and morphologies of Er 2 O 3 films epitaxially grown on both oxidized and clean Si surfaces are investigated by X-ray diffraction, in situ reflection high energy electron
High concentration erbium doping of silicon-rich SiO2 thin films on silicon
Abstract In this work, high concentration erbium doping in silicon-rich SiO2 thin films is demonstrated. Si plus Er dual-implanted thermal SiO2 thin films on Si substrates have been fabricated by
Photoluminescence of erbium ions in heterostructures with silicon nanocrystals
Photoluminescence properties of erbium-doped silicon dioxide layers containing silicon nanocrystals with 1.5–4.5 nm average size are investigated. It is found that the intensity and mean lifetime of
Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms
We develop a model for the excitation of erbium ions in erbium-doped silicon nanocrystals via coupling from confined excitons generated within the silicon nanoclusters. The model provides a
...
1
2
3
...