The field effect transistor

@inproceedings{Dacey1955TheFE,
  title={The field effect transistor},
  author={G. C. Dacey and I. M. Ross},
  year={1955}
}
Previous work on field-effect transistors considered the performance of the device when operated with electric fields in the channel below the critical field, E c , where the mobility of carriers becomes dependent on field. This work is reviewed and it is shown that, in this range of operation, the frequency cut-off, f, and transconductance, g m , of the device increase with increasing values of electric field. New theory is derived for the performance with electric fields greater than E c… CONTINUE READING