The factors study of backside hotspot localization with application Infrared Lock-in Thermography

Abstract

The Infrared Lock-in Thermography (LIT), which is well establish technique for non-destructive evaluation, can be used to identify and locate thermal active electrically defects like shorts and resistive open in microelectronic devices. Most of the localization methods are performed directly on top of die surface. However, the Infrared Lock-In Thermograph (IR-LIT) is one of the localization methods can be performed with front side and backside localization. Basically the backside localization is to overcome the limitation of the front side hotspot localization especially low leakage current failure. To achieve better hotspot localization from the package backside, three important factors are studied; namely die thickness, build-in power setting for IR-LIT, as well as the pulse.

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Cite this paper

@article{Hoe2015TheFS, title={The factors study of backside hotspot localization with application Infrared Lock-in Thermography}, author={T. M. Hoe and Kim Kwee Ng}, journal={2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits}, year={2015}, pages={213-218} }