Factors that affect hotspot localization in Infrared Lock-in Thermography
The Infrared Lock-in Thermography (LIT), which is well establish technique for non-destructive evaluation, can be used to identify and locate thermal active electrically defects like shorts and resistive open in microelectronic devices. Most of the localization methods are performed directly on top of die surface. However, the Infrared Lock-In Thermograph (IR-LIT) is one of the localization methods can be performed with front side and backside localization. Basically the backside localization is to overcome the limitation of the front side hotspot localization especially low leakage current failure. To achieve better hotspot localization from the package backside, three important factors are studied; namely die thickness, build-in power setting for IR-LIT, as well as the pulse.