The fabrication and characterization of NbCN/AlN heterostructures

@article{Barber1995TheFA,
  title={The fabrication and characterization of NbCN/AlN heterostructures},
  author={Z. Barber and D. Tricker and M. Blamire},
  journal={IEEE Transactions on Applied Superconductivity},
  year={1995},
  volume={5},
  pages={2314-2317}
}
Very high quality niobium nitride based superconductor-insulator-superconductor (SIS) junctions have been prepared using aluminium nitride barrier layers deposited by dc reactive magnetron sputtering. These barriers have been shown to grow epitaxially on high quality epitaxial niobium carbonitride (NbCN) base electrodes. High total gap voltages, equal to the maximum that can be expected theoretically, illustrate that there are no degraded layers at the superconductor/insulator interfaces. We… Expand

Figures and Tables from this paper

Niobium nitride/aluminium nitride superconductor/insulator multilayers and tunnel junctions
Niobium nitride/aluminium nitride multilayers have been fabricated using dc reactive magnetron sputter deposition. By careful optimization a suitable set of deposition conditions has been achievedExpand
Growth of niobium nitride/aluminium nitride trilayers and multilayers
Abstract We examine the epitaxial growth of sputtered-deposited NbN/AIN/NbN trilayers on A- and C-plane sapphire and MgO(001), MgO(110) and MgO(111) substrates using transmission electron microscopy.Expand
Niobium nitride/aluminum nitride superlattices
DC reactive magnetron sputtering has been used to prepare niobium nitride/aluminium nitride superconducting/insulator superlattices. Deposition conditions were optimized in order that multilayerExpand
Development of Nb/Al-AlN/NbTiN SIS Junctions With ICP Nitridation
Increasing the operating frequency of SIS receivers requires a shift from Nb/Al-AlOX/Nb junctions to new material systems. Two major limiting factors of higher frequency operation are the increase inExpand
Material aspects for preparing HTS quasiparticle injection devices
Quasiparticle (QP) injection devices based on HTS could play an important role in future superconducting applications if material aspects can be better controlled. One reason why this kind of deviceExpand
Millimeter and Submillimeter Techniques
Editing and formatting differences may exist between this manuscript and the final version.
NbN Superconducting Devices

References

SHOWING 1-10 OF 14 REFERENCES
NbCN Josephson junctions with AlN barriers
Niobium carbonitride (NbCN) Josephson circuits can operate over a wider temperature range than either niobium or niobium nitride circuits. Higher operating temperature places NbCN technology moreExpand
Fabrication and characterization of all-refractory NbCN/Al/AlO/sub x//Al/Nb junctions
High-quality AlO/sub x/ tunnel barriers have been fabricated on epitaxial niobium carbonitride (NbCN) base layers by the deposition of an Al layer followed by thermal oxidation. By careful control ofExpand
Fabrication of all-NbN Josephson tunnel junctions using single crystal NbN films for the base electrodes
All-NbN Josephson tunnel junctions with sputter-deposited magnesium oxide barriers have been fabricated using single-crystal NbN films for the base electrodes. Fabricated Josephson junctions haveExpand
Tunnel junctions fabricated from coherent NbN/MgO/NbN and NbN/Al 2 O 3 /NbN structures
Trilayer structures consisting of two layers of epitaxial, single-crystal NbN and an intervening 2-nm-thick layer of epitaxial MgO or Al 2 O 3 , have been formed in four or two, respectively,Expand
Dual Ion-Beam Deposition of Superconducting NbN Films
Superconducting NbN films have been deposited onto unheated substrates using a dual ion-beam technique. The NbN films produced have Tc up to 12 K and resistivities of ≳150µΩ-cm. The substrateExpand
High critical current density NbN/AlN/NbN tunnel junctions fabricated on ambient temperature MgO substrates
NbN/AlN/NbN tunnel junctions are fabricated at ambient temperature on MgO substrates, and a critical current density of 8 kA/cm2 is obtained in junctions with 1.5–nm–thick AlN barriers. Even thoughExpand
Temperature-dependent properties of niobium nitride Josephson tunnel junctions
We report the electrical properties of all niobium nitride(NbN) Josephson tunnel junctions with magnesium oxide(MgO) films as barriers in the temperature range 4.2-15 K. NbN/MgO/NbN Josephson tunnelExpand
Fabrication and characterization of high current-density, submicron, NbN/MgO/NbN tunnel junctions
At near-millimeter wavelengths, heterodyne receivers based on SIS tunnel junctions are the most sensitive available. However, in order to scale these results to submillimeter wavelengths, certainExpand
Superconducting properties and normal‐state resistivity of single‐crystal NbN films prepared by a reactive rf‐magnetron sputtering method
In this letter, we report some superconducting properties and normal‐state resistivities of single‐crystal NbN films prepared by a reactive rf‐magnetron sputtering method. It was found that theExpand
Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film
A formula is derived for the electric tunnel effect through a potential barrier of arbitrary shape existing in a thin insulating film. The formula is applied to a rectangular barrier with and withoutExpand
...
1
2
...