The enhancement of gate-induced-drain-leakage (GIDL) current in short-channel SOI MOSFET and its application in measuring lateral bipolar current gain beta

@article{Chen1992TheEO,
  title={The enhancement of gate-induced-drain-leakage (GIDL) current in short-channel SOI MOSFET and its application in measuring lateral bipolar current gain beta},
  author={J. C. Chen and Fariborz Assaderaghi and P. Ko and Chenming Calvin Hu},
  journal={IEEE Electron Device Letters},
  year={1992},
  volume={13},
  pages={572-574}
}
An off-state leakage current unique for short-channel SOI MOSFETs is reported. This off-state leakage is the amplification of gate-induced-drain-leakage current by the lateral bipolar transistor in an SOI device due to the floating body. The leakage current can be enhanced by as much as 100 times for 1/4 mu m SOI devices. This can pose severe constraints in future 0.1 mu m SOI device design. A novel technique was developed based on this mechanism to measure the lateral bipolar transistor… CONTINUE READING