• Corpus ID: 119252936

The emergence of topologically protected surface states in epitaxial Bi(111) thin films

@article{Zhu2014TheEO,
  title={The emergence of topologically protected surface states in epitaxial Bi(111) thin films},
  author={Kai Zhu and Lin Wu and Xinxin Gong and Shunhao Xiao and Shiyan Li and Xiaofeng Jin and Mengyu Yao and Dong Qian and Meng Wu and Ji Feng and Q. Niu and Fernando de Juan and Dunghai Lee},
  journal={arXiv: Mesoscale and Nanoscale Physics},
  year={2014}
}
Quantum transport measurements including the Altshuler-Aronov-Spivak (AAS) and Aharonov-Bohm (AB) effects, universal conductance fluctuations (UCF), and weak anti-localization (WAL) have been carried out on epitaxial Bi thin films ($10-70$ bilayers) on Si(111). The results show that while the film interior is insulating all six surfaces of the Bi thin films are robustly metallic. We propose that these properties are the manifestation of a novel phenomenon, namely, a topologically trivial bulk… 

Figures from this paper

Topologically nontrivial bismuth(111) thin films
TLDR
The band mapping revealed odd number of Fermi crossings of the surface bands, which provided new experimental evidences that Bi(111)/Bi2Te3 films of a certain thickness can be topologically nontrivial in three dimension.
Evidence of topological two-dimensional metallic surface states in thin bismuth nanoribbons.
TLDR
These results provided unambiguous transport evidence of the topological 2D metallic surface states in thinner nanoribbons with an insulating bulk and provide a promising pathway to understand the quantum phenomena in Bi arising from the surface states.
Robust surface state transport in thin bismuth nanoribbons
TLDR
The angular-dependent magnetoresistance measurements in single-crystal Bi nanoribbons are reported, and it is found that both the low-field weak antilocalization behavior and the high-field angle-dependent SdH oscillations follow exactly the 2D character, indicative of the2D metallic surface states which dominate the transport properties of thin Bi nan oribbons.
Unconventional interfacial superconductivity in epitaxial Bi/Ni heterostructures
Superconductivity (SC) is one of the most intriguing physical phenomena in nature. Nucleation of SC has long been considered highly unfavorable if not impossible near ferromagnetism, in low
Surface superconductivity in thin cylindrical Bi nanowire.
TLDR
Transport measurements of individual cylindrical single-crystal Bi nanowires, 20 and 32 nm in diameter, show superconductivity below 1.3 K, which is the opposite of the expected behavior for thin superconducting wires.
Fabrication and superconducting property study of 1D single crystalline metal nanowires
Physical properties of quasi-one-dimensional superconducting nanowires can differ significantly from those of bulk superconductors. The reason behind is the impact of thermal and quantum
Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films.
TLDR
The first direct dry transfer of a single-crystalline thin film grown by molecular beam epitaxy is reported, suggesting a route to integrate other group-V epitaxial films (i.e., phosphorus) with arbitrary substrates, as well as potentially to isolate bismuthene, the atomic thin-film limit of bismuth.
Ultra-broadband and high-responsive photodetectors based on bismuth film at room temperature
TLDR
Thickness-dependent conductance and photocurrent reveal that the bulk is the optically active layer while the surface channel is responsible for carrier transportation, paving an avenue to develop ultra-broadband Bi photodetectors for the next-generation multifunctional optoelectronic devices.
Some aspects of epitaxial thin film growth
The article consists of four sections all dealing with the computational modeling of the sputtering process. The first section deals with the difference in Bismuth atomic layer deposition at
Promoting Photosensitivity and Detectivity of the Bi/Si Heterojunction Photodetector by Inserting a WS2 Layer.
TLDR
The working mechanism of the Bi/WS2/Si sandwich-structured photodetector is unveiled, including the efficient passivation of the interface, enhancement of light absorption, and selective carrier blocking, and a good voltage tunability of the photoresponse.
...
1
2
...

References

SHOWING 1-10 OF 15 REFERENCES
Phys
  • Rev. B 35, 1039
  • 1987
Phys
  • Rev. Lett. 109, 166805
  • 2012
Rev
  • Mod. Phys. 83, 1057
  • 2011
Rev
  • Mod. Phys. 82, 3045
  • 2010
Phys
  • Rev. Lett. 103, 087206
  • 2009
Phys
  • Rev. Lett. 99, 146806
  • 2007
Phys
  • Rev. Lett. 99, 146805
  • 2007
Science 317
  • 1729
  • 2007
Phys
  • Rev. Lett. 97, 067203
  • 2006
Progress in Surface Science 81
  • 191
  • 2006
...
1
2
...