The electrical properties of subquarter-micrometer gate-length MOSFET's

@article{Lee1986TheEP,
  title={The electrical properties of subquarter-micrometer gate-length MOSFET's},
  author={Han-Sheng Lee and L. Puzio},
  journal={IEEE Electron Device Letters},
  year={1986},
  volume={7},
  pages={612-614}
}
Direct e-beam writing was used to form device patterns of subquarter-micrometer gate-length MOSFET's. The resulting devices had physical gate lengths of 0.19 µm and channel lengths of 90 nm. The gate oxide thickness was 8.3 nm. In the linear region, the channel conductance was found to be 130 mS/mm.V. The subthreshold slope of the device was 105 mV/decade. Due to the factors of velocity saturation, source resistance, and punchthrough current contribution, the value of transconductance is lower… Expand
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Figures from this paper

Sub-quarter-micrometer n-channel MOSFET's fabricated with direct ion-beam Nitridation
N-channel MOSFET's with physical gate lengths as short as 0.19 µm were fabricated with direct e-beam writing and high resolution pattern transfer techniques. The gate oxide thickness was 8.3 nm withExpand

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