The effects of write/erase cycling on data loss in EEPROMs

@article{Baglee1985TheEO,
  title={The effects of write/erase cycling on data loss in EEPROMs},
  author={D. A. Baglee and M. C. Smayling},
  journal={1985 International Electron Devices Meeting},
  year={1985},
  pages={624-626}
}
Increasing leakage at low electric fields is observed in thin silicon dioxide films after they have been subjected to write/erase cycling. This mechanism anneals out after high temperature baking. Conventional lifetesting techniques for EEPROMs may result in overly optimistic estimations of data retention.