The effects of block oxide length (Lbo) and height (Hbo) in a bMOS

In this paper, we investigate the important device characteristics of block oxide (BO) MOSFETs (bMOS), which are the BO length (L<sub>bo</sub>) and the height (H<sub>bo</sub>). According to the simulation results, the variation of L<sub>bo</sub> and H<sub>bo</sub> strongly affects the device characteristics, such as the sub-threshold swing, threshold… CONTINUE READING