The effects of barrier hydrogenation in NbN‐based Josephson junctions

@inproceedings{Cukauskas1987TheEO,
  title={The effects of barrier hydrogenation in NbN‐based Josephson junctions},
  author={Edward J. Cukauskas and William L. Carter},
  year={1987}
}
NbN/Si/Nb tunnel junctions with hydrogenated amorphous silicon barriers were investigated for several hydrogen concentrations used during barrier deposition. Junctions with critical current densities exceeding 2 kA/cm2 were fabricated using the selective niobium anodization process junction isolation technique. The penetration depth of the NbN‐base electrode material was determined to be 200 nm from the critical current magnetic field modulation period. Some junctions had figure of merit, Vm… CONTINUE READING