The effect of the interface oxidation on tunneling conductance of Co(2)MnSi/MgO/Co(2)MnSi magnetic tunnel junction.


We investigate and discuss the effects of interfacial oxidation on electronic structures and tunnel conductance of the Co(2)MnSi/MgO/Co(2)MnSi(001) magnetic tunnel junction (MTJ) on the basis of first-principles calculations. It is found that the MnSi termination tends to be oxidized compared with the Co termination because of the relaxation of atomic… (More)
DOI: 10.1088/0953-8984/21/6/064245