The effect of temperature dependent processes on the performance of 1.5-μm compressively strained InGaAs(P) MQW semiconductor diode lasers

@article{Sweeney1998TheEO,
  title={The effect of temperature dependent processes on the performance of 1.5-μm compressively strained InGaAs(P) MQW semiconductor diode lasers},
  author={S. J. Sweeney and A. Phillips and A. R. Adams and E. P. O'Reilly and P J Thijs},
  journal={IEEE Photonics Technology Letters},
  year={1998},
  volume={10},
  pages={1076-1078}
}
We describe measurements of the threshold current I/sub th/ and spontaneous emission characteristics of InGaAs (P)-based 1.5-/spl mu/m compressively strained multiple-quantum-well semiconductor lasers from 90 K to above room temperature. We show that below a break-point temperature, T/sub B//spl ap/130 K, I/sub th/ and its temperature dependence are governed by the radiative current. Above this temperature, a thermally activated Auger recombination process becomes the dominant recombination… CONTINUE READING
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Hydrostatic pressure dependence of the threshold current in 1.5 m strained quantum well lasers

  • A. R. Adams, M. Silver, +4 authors P.J.A. Thijs
  • Phys. Status Solid. B,vol. 198, pp. 381–388, 1996…
  • 1996
1 Excerpt

High-performance uncooled 1.3 m AlxGayIn1 x yAs/InP strained-layer quantum-well lasers for subscriber loop applications

  • C.-E. Zah, R. Bhat, +11 authors J. J. Hsieh
  • IEEE J. Quantum Electron., vol. 30, pp. 511–523…
  • 1994

Progress in long-wavelength InGaAs(P) quantum-well semiconductor lasers and amplifiers

  • P.J.A. Thijs, L. F. Tiemeijer, J.J.M. Binsma, T. van Dongen
  • IEEE J. Quantum Electron., vol. 30, pp. 477–499…
  • 1994
1 Excerpt

Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 m compressively strained semiconductor lasers

  • Y. Zou, J. S. Osinski, +5 authors F. D. Crawford
  • IEEE J. Quantum Electron., vol. 29, pp. 1565–1575…
  • 1993
1 Excerpt

Temperature sensitivity and high temperature operation of long wavelength semiconductor lasers

  • E. P. O’Reilly, M. Silver
  • Appl. Phys. Lett., vol. 63, no. 24, pp. 3318–3320…
  • 1993
3 Excerpts

Temperature dependence of long wavelength semiconductor lasers

  • M. Silver A. R. Adams, E. P. O’Reilly, B. Gonul, A. F. Phillips, S. J. Sweeney, P. J. A. Thijs
  • 1992

Temperature dependence of optical gain spectra in InGaAsP/InP doubleheterostructure lasers

  • H. Jung, E. G̈obel, K. M. Romanek, M. H. Pilkuhn
  • Appl. Phys. Lett.,vol. 39, no. 6, pp. 468–470…
  • 1981
1 Excerpt

perature dependence of optical gain spectra in InGaAsP / InP double - heterostructure lasers

  • R. Bhat C.-E. Zah, B. N. Pathak, +10 authors J. J. Hsieh
  • Appl . Phys . Lett .
  • 1981

The temperature dependence of the efficiency and threshold current of In 1 xGaxAsyP1 y lasers related to intervalence band absorption

  • A. R. Adams, M. Asada, Y. Suematsu, S. Arai
  • Jpn. J. Appl. Phys., vol. 19, no. 10, pp. 621…
  • 1980
1 Excerpt

Transition from radiative to non - radiative recombination in 1 . 3  m and 1 . 5  m InGaAs ( P ) multiple quantum well semiconductor diode lasers , ” in

  • E. Göbel Jung, K. M. Romanek, M. H. Pilkuhn
  • Tech . Dig . CLEO ’

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