The effect of reactor pressure on the electrical and structural properties of InN epilayers grown by high-pressure chemical vapor deposition

Abstract

The influence of super-atmospheric reactor pressures (2.5-18.5 bar) on the electrical and structural properties of InN epilayers deposited on GaN/sapphire (0001) templates by high-pressure Chemical Vapor Deposition has been studied. The epilayers were analyzed by Raman, x-ray diffraction (XRD), and Fourier transform infrared reflectance spectrometry to… (More)

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