The effect of a SiO/sub 2/ interface layer on CPW lines and Schottky barrier diodes on HRS substrates

@article{Wu1998TheEO,
  title={The effect of a SiO/sub 2/ interface layer on CPW lines and Schottky barrier diodes on HRS substrates},
  author={Ye. Wu and S. Yang and H. D. Gamble and B. Mervyn Armstrong and V. F. Fusco and J.A.C. Stewert},
  journal={1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.98EX271)},
  year={1998},
  pages={178-180}
}
Aluminium based CPW lines on high resistivity Si (HRS) substrates, and integrated and implanted Schottky barrier diodes have shown bias-dependent leakage current effects. By incorporating a patterned SiO/sub 2/ interface layer between the line conductors and HRS substrate, excellent CPW line performance in terms of leakage current and dissipation loss, and… CONTINUE READING