The design of high linearity pHEMT switches

@article{Lu2010TheDO,
  title={The design of high linearity pHEMT switches},
  author={Ning Lu and Robert J. Weber},
  journal={2010 53rd IEEE International Midwest Symposium on Circuits and Systems},
  year={2010},
  pages={942-945}
}
In this paper we present the effect of gate capacitors on 5 types of single pole single throw (SPST) switches. The designs were undertaken using the 0.8 um gate length GaAs pHEMT process from Skyworks and the analysis was done at 1GHz. We found that the gate capacitors could improve the linearity of 3 types of switches dramatically in the off state, with the design trade-offs of isolation and insertion loss. 

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