The design, fabrication, and characterization of a novel electrode structure self-aligned HBT with a cutoff frequency of 45 GHz

Abstract

This paper establishes a systematic approach for the design, fabrication, and modeling of a newly proposed self, aligned Al-GaAs/GaAs heterojunction bipolar transistor (HBT) employing a two-dimensional heterostructure device simulator and a heterojunction bi-polar transistor circuit simulator. The developed HBT has an abrupt emitter-base heterojunction, and… (More)

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@article{Madihian1987TheDF, title={The design, fabrication, and characterization of a novel electrode structure self-aligned HBT with a cutoff frequency of 45 GHz}, author={Mohammad Madihian and Kiyoko Honjo and Hiromi Toyoshima and Shigetaka Kumashiro}, journal={IEEE Transactions on Electron Devices}, year={1987}, volume={34}, pages={1419-1428} }