The defect reduction of Cu interconnects by optimized Cu seed layer

In Cu interconnects, the disadvantage of physical vapor deposited (PVD) Cu seed is the formation of over-hang on patterned trench. Ar plasma treatment (PT) is utilized to diminish undesirable over-hang profile after the deposition of Cu seed. Moreover, Ar PT improves the surface roughness of Cu seed and enhances the (111) texture of the subsequent… CONTINUE READING