The current-carrying corner inherent to trench isolation


It is shown how the characteristics of the corner MOSFET inherent to trench isolation can be extracted from hardware measurements and how the corner device must be taken into account when extracting MOSFET channel characteristics. For NFETs it is found that the corner's threshold voltage, substrate sensitivity, and sensitivity to well doping are all smaller… (More)

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@article{Bryant1993TheCC, title={The current-carrying corner inherent to trench isolation}, author={Andres Bryant and W. Haensch and Sydney Geissler and J. Mandelman and Daniel J. Poindexter and Mark Steger}, journal={IEEE Electron Device Letters}, year={1993}, volume={14}, pages={412-414} }