The ballistic nano-transistor

@article{Timp1999TheBN,
  title={The ballistic nano-transistor},
  author={G. Timp and J. Bude and K. K. Bourdelle and J. P. Garno and A. Ghetti and H. J. Gossmann and Marc Green and George W. Forsyth and Yong-Hee Kim and R M Kleiman and F. P. Klemens and A. Kornblit and C. Lochstampfor and W J Mansfield and S. Moccio and T. Sorsch and D A Tennant and W. Timp and Roh Suan Tung},
  journal={International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)},
  year={1999},
  pages={55-58}
}
We have achieved extremely high drive current performance and ballistic (T>0.8) transport using ultra-thin (<2 nm) gate oxides in sub-30 nm effective channel length nMOSFETs. The peak drive performance in an nMOSFET was observed at t/sub ox//spl ap/1.3 nm for a 1.5 V power supply voltage with T/sub n//spl ap/0.7, while the peak performance in a pMOSFET was observed at t/sub ox//spl ap/1.5 nm for a -1.5 V supply with T/sub p//spl ap/0.5. Since the carrier scattering in the channel is due… CONTINUE READING
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