The application of scanning capacitance microscopy in device failure analysis [doping profile determination]

@article{Lau2004TheAO,
  title={The application of scanning capacitance microscopy in device failure analysis [doping profile determination]},
  author={Y. M. Lau and V. Lim and L. B. Ang and A. Trigg},
  journal={Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743)},
  year={2004},
  pages={99-102}
}
In this paper, we present the application of scanning capacitance microscopy (SCM) in the failure analysis of 0.11 /spl mu/m technology devices. The SCM results are compared with chemical staining data, and the limitations of chemical staining are illustrated. Cross-sectional SCM imaging and the advantages and limitations of the SCM technique are discussed. 

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Dopant Delineation : Novel Technique for Silicon Dopant Implantation Defects Identification

  • P. E. Russell
  • ULSI Semiconductor Technology Atlas ”
  • 2003

Giannazro, ”Study of interface states and oxide quality to avoid contrast reversal in scanning capacitance microscopy

  • D. Goghero, F. V. Raineri
  • Appl. Phys Lett,.,
  • 2002

Site specific 2-D

  • K. Jarausch, 1. F. Richards, L. Denney, A. Guichard, P. E. Russell
  • Implant Profiling Using FIB Assisted S C M , Proc…
  • 2002

Study of interface states and oxide quality to avoid contrast reversal in scanning capacitance microscopy ”

  • J. C. Ng
  • Appl . Phys Lett
  • 2002

Advances in experimental technique for quantitative hvodimensional dopant profiling by scanning capacitance microscopy

  • V. V. Zavyalov, 1. S. McMurray, C. C. Williams
  • Rev. of Sri. Instru.,
  • 1999

Scanning capacitance microscopy imaging of silicon metaloxidesemiconductor field effect transistors ”

  • S. McMurray, C. C. Williams
  • J . Vac . Sci . Technol . B

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