The advancement of silicon-on-insulator (SOI) devices and their basic properties

@article{Rudenko2020TheAO,
  title={The advancement of silicon-on-insulator (SOI) devices and their basic properties},
  author={Tamara Rudenko and Alexei N. Nazarov and Vladimir S. Lysenko},
  journal={Semiconductor physics, quantum electronics and optoelectronics},
  year={2020},
  volume={23},
  pages={227-252}
}
Silicon-on-insulator (SOI) is most promising present-day silicon technology. The use of SOI provides significant benefits over traditional bulk silicon technology in fabrication of many integrated circuits (ICs), and in particular, complementary metal-oxidesemiconductor (CMOS) ICs. It also allows extending the miniaturization of CMOS devices into the nanometer region. In this review paper, we briefly describe evolution of SOI technology and its main areas of application. The basic technological… 
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