The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length

@article{Hergenrother1999TheVR,
  title={The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length},
  author={J. M. Hergenrother and D J Monroe and F. P. Klemens and G F Weber and W J Mansfield and M. Baker and F. Baumann and K. J. Bolan and J. Bower and N. A. Ciampa and R. Cirelli and J. I. Colonell and D. J. Eaglesham and John Frackoviak and H. J. Gossmann and M. Green and S. J. Hillenius and C. King and R M Kleiman and W. Lai and J.T.-C. Lee and R. Liu and H D Maynard and M. Morris and S.-H. Oh and C Pai and Christopher Rafferty and J. M. Rosamilia and T. Sorsch and H. Vuong},
  journal={International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)},
  year={1999},
  pages={75-78}
}
We have fabricated and demonstrated a new device called the Vertical Replacement-Gate (VRG) MOSFET. This is the first MOSFET ever built that combines (1) a gate length controlled precisely through a deposited film thickness, independently of lithography and etch, and (2) a high-quality gate oxide grown on a single-crystal Si channel. In addition to this unique combination, the VRG-MOSFET includes a self-aligned S/D formed by solid source diffusion (SSD) and small parasitic overlap, junction… CONTINUE READING
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