The Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devices

@inproceedings{Asenov2002TheUO,
  title={The Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devices},
  author={A. Asenov and J. R. Watling and Andrew R. Brown},
  year={2002}
}
As MOSFETs are scaled to sub 100 nm dimensions, quantum mechanical confinement in the direction normal to the silicon dioxide interface and tunnelling (through the gate oxide, band-to-band and from sourceto-drain) start to strongly affect their characteristics. Recently it has been demonstrated that first order quantum corrections can be successfully introduced in self-consistent drift diffusion-type models using Quantum Potentials. In this paper we describe the introduction of such quantum… CONTINUE READING
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