The Use of Low Temperature AlInAs and GalnAs Lattice Matched to InP in the Fabrication of HBTs and HEMTs

@inproceedings{Metzger1991TheUO,
  title={The Use of Low Temperature AlInAs and GalnAs Lattice Matched to InP in the Fabrication of HBTs and HEMTs},
  author={Robert A. Metzger and A. Seymour Brown and Robert G. Wilson and Tingyang Liu and William E. Stanchina and Loi D. Nguyen and Adele E. Schmitz and L. G. McCray and J. A. Henige},
  year={1991}
}
AlInAs and GaInAs lattice matched to InP and grown by MBE over a temperature range of 200 to 350°C (normal growth temperature of 500°C) has been used to enhance the device performance of inverted (where the donor layer lies below the channel) High Electron Mobility Transistors (HEMTs) and Heterojunction Bipolar Transistors (HBTs), respectively. We will show that an AlInAs spacer grown over a temperature range of 300 to 350°C and inserted between the AlInAs donor layer and GaInAs channel… CONTINUE READING