The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability

  title={The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability},
  author={Richard K. Williams and Mohamed N. Darwish and Richard A. Blanchard and Ralf Siemieniec and P. Rutter and Yusuke Kawaguchi},
  journal={IEEE Transactions on Electron Devices},
The technological development of application specific VDMOS and lateral trench power MOSFETs is described. Unlike general-purpose trench vertical DMOS, application specific trench DMOS comprise devices merged or optimized for a specific function or characteristic. Examples include the bidirectional lithium ion battery disconnect switch, the airbag squib driver with safety redundancy, the antilock breaking systems solenoid driver with repeated avalanche operation, and various forms of… Expand
A SiC Trench MOSFET concept offering improved channel mobility and high reliability
This work discusses the challenges in the design of a SiC Power MOSFET compared to their silicon-based relatives and describes a novel SiC Trench MOSFET concept. The most prominent difficulties beingExpand
Simulation Study of a Super-Junction Deep-Trench LDMOS With a Trapezoidal Trench
A super-junction (SJ) deep-trench (DT) lateral double-diffused metal-oxide-semiconductor transistor improved by tilting the DT sidewalls is proposed. The incline of sidewalls introduces someExpand
Novel failure mechanism and improvement for split-gate trench MOSFET with large current under unclamped inductive switch stress
Abstract In this paper, a novel failure mechanism under unclamped inductive switch (UIS) for Split-Gate Trench Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with large current isExpand
Lateral Power Fin MOSFET With a High-k Passivation for Ultra-Low On-Resistance
According to the simulation results, when compared to a lateral power planar MOSFET with an HK passivation, the proposed device offers a 78% reduction in specific on-resistance at the same 100-V breakdown voltage. Expand
150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers
This work used an Integrated System Engineering-Technology Computer-Aided Design (ISE-TCAD) simulator to investigate and study the 150 V SGT power MOSFETs with different EPI structures, by modulating the thickness and resistivity of each EPI layer. Expand
Novel Isolation Structure for High-Voltage Integrated Superjunction MOSFETs
A novel isolation structure for high-voltage integrated superjunction (SJ) MOSFETs is proposed in this letter. The structure consists of serial lateral SJ diodes with etched underlying n-bufferExpand
Improvement of Deep-Trench LDMOS With Variation Vertical Doping for Charge-Balance Super-Junction
A design concept of variation vertical doping is proposed to upgrade the deep-trench lateral double-diffused metal–oxide–semiconductor field-effect transistor. Due to the proposal, a drift region inExpand
Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions
In this article, commercially 1200-V asymmetric and double trench silicon carbide (SiC) metal–oxide–semiconductor-field-effect transistors (mosfets) from two manufacturers are investigated byExpand
Channel Length Optimization for Planar LDMOS Field-Effect Transistors for Low-Voltage Power Applications
We identify an optimum channel length for planar Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) field-effect transistors, in terms of the specific on-resistance, through systematic deviceExpand
Breakdown Voltage Walk-in Phenomenon and Optimization for the Trench-Gate p-Type VDMOS Under Single Avalanche Stress
An anomalous breakdown voltage (BV) walk-in phenomenon of the trench-gate p-type vertical double-diffused metal–oxide–semiconductor (VDMOS) after single avalanche stress has been experimentallyExpand


High side n-channel and bidirectional Trench Lateral Power MOSFETs on one chip for DCDC converter ICs
Trench lateral power MOSFETs (TLPMs) are suitable for one chip power ICs due to its low specific on- resistance and ease of fabrication with CDMOS devices. In our smart power IC process we integratedExpand
Integrated Bi-directional Trench Lateral Power MOSFETs for One Chip Lithium-ion Battery Protection ICs
  • D. H. Lu, N. Fujishima, +5 authors K. Takagiwa
  • Engineering
  • Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.
  • 2005
A low specific on-resistance bi-directional trench lateral power MOSFET (BTLPM) has been integrated with a controller in a 0.6mum BiCDMOS process for single-cell lithium-ion battery protector,Expand
Low Gate Charge 20V Class Trench-aligning Lateral Power MOSFET
A low gate charge high-side N-channel trench lateral power MOSFET (TLPM) is developed. Using trench self-aligning structure, a short gate length and minimum gate-drain overlap are realized, and lowExpand
A high density, low on-resistance, trench lateral power MOSFET with a trench bottom source contact
  • N. Fujishima, A. Sugi, +4 authors C. Salama
  • Materials Science
  • Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216)
  • 2001
A trench lateral power MOSFET with a trench bottom source contact (TLPM/S) is proposed, fabricated, and characterized. The TLPM/S is formed along the sidewalls of the trenches so as to reduce theExpand
Improved 20 V Lateral Trench Gate Power MOSFETs with Very Low On-resistance of 7 . 8 mQ . mm 2 Ala 0
We propose an improved lateral trench gate MOSFET with a new trench drain contact. The device is predicted to achieve 25V breakdown voltage and a very low on-resistance of 7.8 mC2*mm2, which is byExpand
A high density, low on-resistance p-channel trench lateral power MOSFET for high side switches
  • M. Sawada, A. Sugi, +4 authors N. Fujishima
  • Engineering, Psychology
  • 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551)
  • 2004
A trench lateral power MOSFET (TLPM) has a unique structure. The gate is formed on the trench sidewall, and the drain is connected with metal wire at the bottom of the trench. This structure enablesExpand
A trench lateral power MOSFET using self-aligned trench bottom contact holes
A novel Trench Lateral Power MOSFET (T-LPM) structure and its fabrication process are presented in this paper. The gate, channel, and the drift region are built on the side-wall of the trench. TheExpand
Monolithically integrated power MOSFET and Schottky diode with improved reverse recovery characteristics
A power DMOSFET structure with a monolithically integrated Schottky diode located under the source contact pad is described. In this structure the source contact metallization step is also used toExpand
A 30 V class extremely low on-resistance meshed trench lateral power MOSFET
  • A. Sugi, K. Tabuchi, +4 authors C. Salama
  • Engineering
  • Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics
  • 2002
A meshed trench lateral power MOSFET with a trench bottom source contact (M-TLPM/S) is proposed, fabricated, and characterized. The M-TLPM/S is formed along the sidewalls of the meshed trench. TheExpand
Second-generation one chip li-ion battery protection IC with an Asymmetric Bidirectional Trench Lateral Power MOSFET
Due to the wide distribution of cellular phones, lithium-ion battery protection ICs are required to further reduce their sizes and costs. Because of asymmetric requirement of short-circuit currentExpand