The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability

@article{Williams2017TheTP,
  title={The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability},
  author={R. K. Williams and M. Darwish and Richard A. Blanchard and R. Siemieniec and P. Rutter and Y. Kawaguchi},
  journal={IEEE Transactions on Electron Devices},
  year={2017},
  volume={64},
  pages={692-712}
}
  • R. K. Williams, M. Darwish, +3 authors Y. Kawaguchi
  • Published 2017
  • Engineering
  • IEEE Transactions on Electron Devices
  • The technological development of application specific VDMOS and lateral trench power MOSFETs is described. Unlike general-purpose trench vertical DMOS, application specific trench DMOS comprise devices merged or optimized for a specific function or characteristic. Examples include the bidirectional lithium ion battery disconnect switch, the airbag squib driver with safety redundancy, the antilock breaking systems solenoid driver with repeated avalanche operation, and various forms of… CONTINUE READING
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