The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability

@article{Williams2017TheTP,
  title={The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability},
  author={Richard K. Williams and Mohamed N. Darwish and Richard A. Blanchard and Ralf Siemieniec and P. Rutter and Yusuke Kawaguchi},
  journal={IEEE Transactions on Electron Devices},
  year={2017},
  volume={64},
  pages={692-712}
}
The technological development of application specific VDMOS and lateral trench power MOSFETs is described. Unlike general-purpose trench vertical DMOS, application specific trench DMOS comprise devices merged or optimized for a specific function or characteristic. Examples include the bidirectional lithium ion battery disconnect switch, the airbag squib driver with safety redundancy, the antilock breaking systems solenoid driver with repeated avalanche operation, and various forms of… 
A SiC Trench MOSFET concept offering improved channel mobility and high reliability
This work discusses the challenges in the design of a SiC Power MOSFET compared to their silicon-based relatives and describes a novel SiC Trench MOSFET concept. The most prominent difficulties being
Charge Balance and UIS Robustness of Trench Field Plate Power MOSFETs
The unclamped inductive switching (UIS) robustness of trench field plate (TFP) power MOSFETs depends on the device electrostatics, referred to as the "charge balance". The devices with relatively
Simulation Study of a Super-Junction Deep-Trench LDMOS With a Trapezoidal Trench
A super-junction (SJ) deep-trench (DT) lateral double-diffused metal-oxide-semiconductor transistor improved by tilting the DT sidewalls is proposed. The incline of sidewalls introduces some
1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer
TLDR
The simulation results of physical model are consistent well with the experiment data in transfer, output, and breakdown characteristic curves, which demonstrate the validity of the simulation data obtained by Silvaco technology computer aided design (Silvaco TCAD).
Lateral Power Fin MOSFET With a High-k Passivation for Ultra-Low On-Resistance
TLDR
According to the simulation results, when compared to a lateral power planar MOSFET with an HK passivation, the proposed device offers a 78% reduction in specific on-resistance at the same 100-V breakdown voltage.
150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers
TLDR
This work used an Integrated System Engineering-Technology Computer-Aided Design (ISE-TCAD) simulator to investigate and study the 150 V SGT power MOSFETs with different EPI structures, by modulating the thickness and resistivity of each EPI layer.
Novel Isolation Structure for High-Voltage Integrated Superjunction MOSFETs
A novel isolation structure for high-voltage integrated superjunction (SJ) MOSFETs is proposed in this letter. The structure consists of serial lateral SJ diodes with etched underlying n-buffer
Terminal Breakdown Voltage Degradation by Avalanche Stress Induced Hot-Hole Injection in Split Gate Trench Power MOSFET
  • Dong Fang, Zhiyu Lin, Bo Zhang
  • Engineering
    2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
  • 2022
A terminal breakdown voltage (BV) degradation of split gate trench power MOSFET (SGT-MOSFET) is studied in this work. High electric field and impact ionization generation rate (IIG) will increase the
Improvement of Deep-Trench LDMOS With Variation Vertical Doping for Charge-Balance Super-Junction
A design concept of variation vertical doping is proposed to upgrade the deep-trench lateral double-diffused metal–oxide–semiconductor field-effect transistor. Due to the proposal, a drift region in
...
...

References

SHOWING 1-10 OF 111 REFERENCES
Low Gate Charge 20V Class Trench-aligning Lateral Power MOSFET
A low gate charge high-side N-channel trench lateral power MOSFET (TLPM) is developed. Using trench self-aligning structure, a short gate length and minimum gate-drain overlap are realized, and low
A high density, low on-resistance, trench lateral power MOSFET with a trench bottom source contact
  • N. Fujishima, A. Sugi, C. Salama
  • Engineering
    Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216)
  • 2001
A trench lateral power MOSFET with a trench bottom source contact (TLPM/S) is proposed, fabricated, and characterized. The TLPM/S is formed along the sidewalls of the trenches so as to reduce the
Improved 20 V Lateral Trench Gate Power MOSFETs with Very Low On-resistance of 7 . 8 mQ . mm 2 Ala 0
We propose an improved lateral trench gate MOSFET with a new trench drain contact. The device is predicted to achieve 25V breakdown voltage and a very low on-resistance of 7.8 mC2*mm2, which is by
A high density, low on-resistance p-channel trench lateral power MOSFET for high side switches
  • M. Sawada, A. Sugi, N. Fujishima
  • Engineering
    2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551)
  • 2004
A trench lateral power MOSFET (TLPM) has a unique structure. The gate is formed on the trench sidewall, and the drain is connected with metal wire at the bottom of the trench. This structure enables
A trench lateral power MOSFET using self-aligned trench bottom contact holes
  • N. Fujishima, C. Salama
  • Engineering, Physics
    International Electron Devices Meeting. IEDM Technical Digest
  • 1997
A novel Trench Lateral Power MOSFET (T-LPM) structure and its fabrication process are presented in this paper. The gate, channel, and the drift region are built on the side-wall of the trench. The
Monolithically integrated power MOSFET and Schottky diode with improved reverse recovery characteristics
A power DMOSFET structure with a monolithically integrated Schottky diode located under the source contact pad is described. In this structure the source contact metallization step is also used to
A 30 V class extremely low on-resistance meshed trench lateral power MOSFET
  • A. Sugi, K. Tabuchi, C. Salama
  • Engineering, Physics
    Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics
  • 2002
A meshed trench lateral power MOSFET with a trench bottom source contact (M-TLPM/S) is proposed, fabricated, and characterized. The M-TLPM/S is formed along the sidewalls of the meshed trench. The
Second-generation one chip li-ion battery protection IC with an Asymmetric Bidirectional Trench Lateral Power MOSFET
Due to the wide distribution of cellular phones, lithium-ion battery protection ICs are required to further reduce their sizes and costs. Because of asymmetric requirement of short-circuit current
Optimizing oxide charge balanced devices for Unclamped Inductive Switching (UIS)
Power MOSFET designs have been moving to higher performance particularly in the medium voltage area. (60V to 300V) New designs require lower Specific On-resistance while not sacrificing Unclamped
High density, low on-resistance, high side N-channel trench lateral power MOSFET with thick copper metal
  • M. Sawada, A. Sugi, N. Fujishima
  • Engineering
    2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs
  • 2004
We proposed a low side N-channel trench lateral power MOSFET (TLPM) in (N.Fujishima et al, Proc. of IEDM 2002, p.455-458). In this paper, a high side N-channel TLPM, which is isolated from the
...
...