The Temperature Dependence in the Subthreshold Regime of Fully Depleted Double-Gate FinFETs

@article{Sulley2005TheTD,
  title={The Temperature Dependence in the Subthreshold Regime of Fully Depleted Double-Gate FinFETs},
  author={R. K. Sulley and W. Clark and E. Nowak},
  journal={2005 International Semiconductor Device Research Symposium},
  year={2005},
  pages={11-12}
}
An experimental investigation of the effects of temperature between 218K and 393K of FinFET operation in weak inversion is reported. The threshold voltage, subthreshold swing and the drain current at which extrapolated threshold voltage is defined, IVT, of fully depleted double gate n-type FinFETs are analysed. A VT temperature coefficient of -0.7mV/K is… CONTINUE READING