The TFT A New Thin-Film Transistor

@article{Weimer1962TheTA,
  title={The TFT A New Thin-Film Transistor},
  author={Paul K. Weimer},
  journal={Proceedings of the IRE},
  year={1962},
  volume={50},
  pages={1462-1469}
}
  • P. K. Weimer
  • Published 1 June 1962
  • Physics
  • Proceedings of the IRE
A thin-film transistor, TFT, fabricated by evaporation of all components on to an insulating substrate has been developed. Operation is based upon the control of injected majority carriers in a wide-band-gap semiconductor by means of an insulated control gate. Experimental units using microcrystalline layers of cadmium sulfide have yielded voltage amplification factors greater than 100, transconductances greater than 10,000 , μmho, input impedances greater than 106 Ω shunted by 50 pf and gain… 
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