The Surface-Barrier Transistor: Part I-Principles of the Surface-Barrier Transistor
@article{Bradley1953TheST, title={The Surface-Barrier Transistor: Part I-Principles of the Surface-Barrier Transistor}, author={W. Bradley}, journal={Proceedings of the IRE}, year={1953}, volume={41}, pages={1702-1706} }
This paper, consisting of five parts, describes the principle, fabrication, circuit application, and theoretical bases of a new semiconductor transducer, the surface-barrier transistor. This device, produced by precise electrochemical etching and plating techniques, operates at frequencies in excess of 60 mc while displaying the low-voltage, lower-power-consumption and low-noise properties of transistors hitherto confined to much lower frequencies. Part I describes the basic discovery which led… CONTINUE READING
37 Citations
Physical mechanisms leading to deterioration of transistor life
- Physics
- IRE Transactions on Electron Devices
- 1958
The Effective Surface Recombination of a Germaniun Surface with a Floating Barrier
- Materials Science
- Proceedings of the IRE
- 1955
- 16
The Spacistor, A New Class of High-Frequency Semiconductor Devices
- Materials Science
- Proceedings of the IRE
- 1957
- 13
Analytical Studies on Effects of Surface Recombination on the Current Amplification Factor of Alloy Junction and Surface Barrier Transistors
- Mathematics
- Proceedings of the IRE
- 1960
- 2