The Surface-Barrier Transistor: Part I-Principles of the Surface-Barrier Transistor

@article{Bradley1953TheST,
  title={The Surface-Barrier Transistor: Part I-Principles of the Surface-Barrier Transistor},
  author={Wayne E. Bradley},
  journal={Proceedings of the IRE},
  year={1953},
  volume={41},
  pages={1702-1706}
}
  • W. E. Bradley
  • Published 1 December 1953
  • Physics
  • Proceedings of the IRE
This paper, consisting of five parts, describes the principle, fabrication, circuit application, and theoretical bases of a new semiconductor transducer, the surface-barrier transistor. This device, produced by precise electrochemical etching and plating techniques, operates at frequencies in excess of 60 mc while displaying the low-voltage, lower-power-consumption and low-noise properties of transistors hitherto confined to much lower frequencies. Part I describes the basic discovery which led… 

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