The RF Pulse Susceptibility of UHF Transistors

@article{Whalen1975TheRP,
  title={The RF Pulse Susceptibility of UHF Transistors},
  author={James J. Whalen},
  journal={IEEE Transactions on Electromagnetic Compatibility},
  year={1975},
  volume={EMC-17},
  pages={220-225}
}
The electromagnetic susceptibility of UHF transistors is investigated. The 2N5179 RF amplifier type transistor was selected as a representative UHF transistor because of its chip structure. It is a silicon n-p-n epitaxial planar transistor with an interdigitated baseemitter metallization pattern. Several manufacturer's versions were tested. A single RF pulse at 240 MHz was applied directly to the base terminal with the emitter terminal grounded. The incident RF pulse power required to cause a… CONTINUE READING
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