The Preparation of Nanocrystalline Silicon by Plasma-Enhanced Hydrogenation for the Fabrication of Light-Emitting Diodes

@article{Jamei2007ThePO,
  title={The Preparation of Nanocrystalline Silicon by Plasma-Enhanced Hydrogenation for the Fabrication of Light-Emitting Diodes},
  author={Mehdi Jamei and F. Karbassian and Shamsoddin Mohajerzadeh and Yaser Abdi and Mallory Q. Robertson and Simon Yuill},
  journal={IEEE Electron Device Letters},
  year={2007},
  volume={28},
  pages={207-210}
}
The fabrication of nanocrystalline silicon light-emitting diodes is reported using a novel plasma-enhanced hydrogenation method. The fabrication process consisted of the deposition of amorphous silicon on a silicon substrate, a hydrogen plasma treatment, and subsequent annealing, and the deposition of TiO2, indium-tin oxide, and metal contact layers. The entire process was performed at temperatures below 400 degC and is compatible with standard silicon fabrication technologies. The current… CONTINUE READING

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