The Positron as a Probe for Studying Bulk and Defect Properties in Semiconductors

@inproceedings{Dlubek1986ThePA,
  title={The Positron as a Probe for Studying Bulk and Defect Properties in Semiconductors},
  author={G{\"u}nter Dlubek and O. Br{\"u}mmer},
  year={1986}
}
Positron lifetime measurements are used to study various doped and undoped III–V compound semiconductors like GaAs, GaP, InAs and InP. In some as-grown crystals native vacancies (V, V) or their complexes with dopants (TeAsV, VPZnInV) are detected with maximum concentrations of a few 1018 cm−3. In undoped GaAs neutral As vacancies V are identified, the concentration of which varies locally. The vacancies have their origin in deviations from the stoichiometrie composition of the compound. They… CONTINUE READING