The Physics of Electric Field Effect Thermoelectric Devices

  title={The Physics of Electric Field Effect Thermoelectric Devices},
  author={V. B. Sandomirsky and A. V. Butenko and R. Levin and Yanick Schlesinger},
  journal={arXiv: Condensed Matter},
We describe here a novel approach to the subject of thermoelectric devices. The current best thermoelectrics are based on heavily doped semiconductors or semimetal alloys. We show that utilization of electric field effect or ferroelectric field effect, not only provides a new route to this problem, bypassing the drawbacks of conventional doping, but also offers significantly improved thermoelectric characteristics. We present here model calculation of the thermoelectric figure of merit in thin… 
1 Citations

Figures from this paper

Temperature dependencies of the electric field effect resistivity and thermoelectric properties of thin Bi-alloy wires
The temperature dependencies (4.2 - 300 K) of electrical field effect (EFE) in bismuth monocrystal wires were investigated. From our experiments on EFE the temperature ranges where /spl mu//sub n/ >


Very large magnetoresistance in electrodeposited single-crystal Bi thin films (invited)
Single-crystal bismuth thin films, fabricated by electrodeposition and suitable annealing, exhibit very large magnetoresistance of 400 000% at 5 K and 300% at 300 K, as well as pronounced
Shubnikov-de Haas oscillations in electrodeposited single-crystal bismuth films
Author(s): Yang, F; Liu, K; Hong, K; Reich, D; Searson, P | Abstract: Shubnikov-de Haas oscillations have been observed in Bi thin films fabricated by electrodeposition. The observed dominant
Phys. Rev. B Journal of Appl. Phys
  • Phys. Rev. B Journal of Appl. Phys
  • 2000
Sol. State Phys
  • Sol. State Phys
  • 1998
Film Thermoelements: Physics and Application
  • Film Thermoelements: Physics and Application
  • 1985
Z. Dashevsky
  • Z. Dashevsky