The Origin of Ideality Factors N > 2 of Shunts and Surfaces in the Dark I-v Curves of Si Solar Cells

@inproceedings{Breitenstein2006TheOO,
  title={The Origin of Ideality Factors N > 2 of Shunts and Surfaces in the Dark I-v Curves of Si Solar Cells},
  author={Otwin Breitenstein and P. P. Altermatt and Klaus Ramspeck and Andreas Schenk},
  year={2006}
}
So far, a general model for the explanation of non-linear shunts and edge currents, often showing ideality factors n > 2, has been missing. Non-linear shunts like scratches and edge currents are the major source of the recombination current of industrial crystalline silicon solar cells. Moreover, the reverse current of such cells behaves always linear or even superlinear instead of saturation-type, as expected. We propose that the edge recombination current and other non-linear shunts can be… CONTINUE READING