The Observation of Width Quantization Impact on Device Performance and Reliability for High-k/Metal Tri-Gate FinFET

@article{Yeh2016TheOO,
  title={The Observation of Width Quantization Impact on Device Performance and Reliability for High-k/Metal Tri-Gate FinFET},
  author={Wen-Kuan Yeh and Wenqi Zhang and Yi-Lin Yang and An-Ni Dai and Kehuey Wu and Tung-Huan Chou and Cheng-Li Lin and Kwang-Jow Gan and Chia-Hung Shih and Po-Ying Chen},
  journal={IEEE Transactions on Device and Materials Reliability},
  year={2016},
  volume={16},
  pages={610-616}
}
In this paper, the impact of width quantization on device characteristic and stressing induced device degradation for high-k/metal tri-gate n/p-type FinFET was investigated well including electrical characteristic clarification and simulation. Carrier conduction in the trapezoidal shape Si-fin body of FinFETs is different for devices with different Fin bottom widths (WFin_bottom), which will impact the device performance and reliability. For n-type FinFETs, the experimental results show that… CONTINUE READING

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