The MOS Single Electron Transistor ( MOS-SET )

Abstract

We study very small gated SOI nanowires defined by e-beam lithography. Electrical transport at low temperature (below ≈ 10K) is dominated by Coulomb blockade. In the metallic regime at high Vg very periodic oscillations are recorded and the measured period corresponds to the whole surface of wire covered by the gate. Below the threshold the energy level… (More)

6 Figures and Tables

Topics

  • Presentations referencing similar topics