The Invention and Demonstration of the IGBT [A Look Back]

  title={The Invention and Demonstration of the IGBT [A Look Back]},
  author={Krishna Shenai},
  journal={IEEE Power Electronics Magazine},
  • K. Shenai
  • Published 22 June 2015
  • Engineering
  • IEEE Power Electronics Magazine
Much of the credit for 20th-century advances in computing and communication goes to the silicon transistor and the integrated circuit. The same may be said for the silicon insulated gate bipolar transistor (IGBT) with respect to the impending revolution taking place in energy technology. The silicon IGBT offers unprecedented energy efficiency when switching electrical power in the range of few hundred kilowatts to multimegawatts at a low manufacturing cost. It is transforming the electric… 

Figures from this paper

The History of Magna-Power Electronics: The Path to a Vertically Integrated U.S. Electronics Manufacturer [History]
Magna-Power Electronics (MPE) was founded in 1981 with the intent of being a power electronics, lighting, and magnetics research and development (R&D) company. The company and its founder's
The Figure of Merit of a Semiconductor Power Electronics Switch
  • K. Shenai
  • Engineering
    IEEE Transactions on Electron Devices
  • 2018
The figure of merit (FOM) of a semiconductor device represents an important quality as it pertains to its performance limits and is often used to drive the technology development in a specific
Power Semiconductor Devices for Smart Grid and Renewable Energy Systems
  • A. Huang
  • Engineering
    Proceedings of the IEEE
  • 2017
Some of the major power semiconductor devices technologies and their potential impacts and roadmaps are reviewed.
  • A. Huang
  • Engineering
    Power Electronics in Renewable Energy Systems and Smart Grid
  • 2019
This chapter intends to provide a comprehensive and comparative discussion of various important power device technologies which are critical for industrial, smart grid and renewable energy
Uncertain Hybrid Multiple Attribute Group Decision of Offshore Wind Power Transmission Mode Based on theVIKOR Method
With the increasing scale of offshore wind power, large-capacity and long-distance offshore wind power will be a trend in the future development of wind power. However, compared with onshore wind
Contribution aux modèles des perturbations électromagnétiques émises par les convertisseurs de l’électronique de puissance
Avec l'electrification des moyens de transports, en particulier dans les applications avions et l’automobile, la consommation electrique est en pleine croissance. Cela conduit a de nouveaux problemes
Fatigue thermomécanique des connexions dans les modules de puissance à semi-conducteurs.
Le sujet de these porte sur le vieillissement des modules de puissance a semi-conducteurs. En fonctionnement, ces modules subissent un echauffement propre qui peut varier cycliquement dans le temps


The insulated gate rectifier (IGR): A new power switching device
A new power semiconductor device called the Insulated Gate Rectifier (IGR) is described in this paper. This device has the advantages of operating at high current densities while requiring low gate
Insulated-gate planar thyristors: I—Structure and basic operation
A high-voltage planar triac which is controlled by an insulated-gate terminal is described. Its structure is related to the DMOS transistor on which it is based and its multiple operating modes are
Switching speed enhancement in insulated gate transistors by electron irradiation
  • B. J. Baliga
  • Engineering, Physics
    IEEE Transactions on Electron Devices
  • 1984
High-speed switching in insulated gate transistors (IGT's) has been achieved by using electron irradiation. This technique allows excellent control over the switching speed with the ability to reduce
25 amp, 500 volt insulated gate transistors
The concept of merging MOS gating with bi-polar current conduction to create a new family of power semiconductor devices with superior electrical characteristics was reported at last year's
Insulated-gate planar thyristors: II—Quantitative modeling
The basic modes of operation of a new planar, high-voltage thyristor which is controlled by an insulated gate are described in Part I. This paper presents models for the dc operation of the device.
Next Generation High Performance BIGT HiPak Modules
Issue 5 2010 Power Electronics Europe The practical realization of the Bimode Insulated Gate Transistor (BIGT) will provide a potential solution for future high voltage applications
Functional integration of power MOS and bipolar devices
  • J. Tihanyi
  • Engineering
    1980 International Electron Devices Meeting
  • 1980
The development of vertical power MOSFETs has made it possible for MOS and bipolar functions to be combined advantageously. The SIPMOS (Siemens Power MOS) technique is eminently suitable for this
Improved COMFETs with fast switching speed and high-current capability
Conventional vertical power MOSFETs are limited at high voltages (>500V) by the appreciable resistance of their epitaxial drain region. In a new MOS-gate controlled device called a COMFET (or an
Suppressing latchup in insulated gate transistors
Two-dimensional computer modeling of insulated gate transistor (IGT) structures has been used to demonstrate the suppression of latchup in the parasitic thyristor by increasing the p-base