The Impact of Thickness Control in HfSiON Gate Dielectric on Electron Mobility with sub-nm EOT

@inproceedings{Mizutani2005TheIO,
  title={The Impact of Thickness Control in HfSiON Gate Dielectric on Electron Mobility with sub-nm EOT},
  author={Masayoshi Mizutani and Toshimitsu Hayashi and Makoto Inoue and Jiro Yugami and Kazushiro Nomura and Jun-ichi Tsuchimoto and Yasuhide Ohno and Masafumi Yoneda},
  year={2005}
}