The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET

@article{Chen2015TheIO,
  title={The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET},
  author={Kainan Chen and Zhengming Zhao and Liqiang Yuan and Ting Lu and Fanbo He},
  journal={IEEE Transactions on Electron Devices},
  year={2015},
  volume={62},
  pages={333-338}
}
The nonlinear junction capacitances of power devices are critical for the switching transient, which should be fully considered in the modeling and transient analysis, especially for high-frequency applications. The silicon carbide (SiC) MOSFET combined with SiC Schottky Barrier Diode (SBD) is recognized as the proposed choice for high-power and high-frequency converters. However, in the existing SiC MOSFET models only the nonlinearity of gate-drain capacitance is considered meticulously, but… CONTINUE READING

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