The Impact of Nongray Thermal Transport on the Temperature of AlGaN/GaN HFETs

@article{Donmezer2015TheIO,
  title={The Impact of Nongray Thermal Transport on the Temperature of AlGaN/GaN HFETs},
  author={Nazli Donmezer and Munmun Islam and P. Douglas Yoder and Samuel Graham},
  journal={IEEE Transactions on Electron Devices},
  year={2015},
  volume={62},
  pages={2437-2444}
}
The hotspot temperature in AlGaN/GaN heterostructure FETs has been of great interest due to its effect on the reliability of these devices. Both the nanoscale heat transfer effects and complex energy transfer mechanism from electrons to lattice are factors affecting the hotspot temperature, which is not accounted for in continuum level thermal simulations… CONTINUE READING