The IMC formation and progress in the copper pillar Cu/Sn1.8Ag /OSP-Cu microbump structure upon current stressing

@article{Chen2014TheIF,
  title={The IMC formation and progress in the copper pillar Cu/Sn1.8Ag /OSP-Cu microbump structure upon current stressing},
  author={Chiao-Wen Chen and Kwang-Lung Lin and Ying-Ta Chiu and Chin-Li Kao and Chiu-Wen Lee and Ping-Feng Yang},
  journal={2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)},
  year={2014},
  pages={518-521}
}
The present study investigated the evolution of intermetallic compounds on a microbump structure upon electric current stressing. The incorporation of Cu pillar gives rise to the microbump structure of TiCuCu/Sn1.8Ag/OSP (organic solderability preservative)-Cu. The current stressing was conducted at a current density of 1.0 × 104 A/cm2 under 125°C for various durations of 24hr, 100hr, 200hr, 300hr, and tested to fail(566hr). In order to have a good understanding to the progress and mechanism of… CONTINUE READING

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