The Ground Plane in Buried Oxide for Controlling Short-Channel Effects in Nanoscale SOI MOSFETs

@article{Kumar2008TheGP,
  title={The Ground Plane in Buried Oxide for Controlling Short-Channel Effects in Nanoscale SOI MOSFETs},
  author={M. Jagadesh Kumar and Mogili Siva},
  journal={IEEE Transactions on Electron Devices},
  year={2008},
  volume={55},
  pages={1554-1557}
}
The ground plane (GP) concept is one of the techniques used to reduce the drain-induced barrier lowering (DIBL) in nanoscale MOSFETs and is effective only when the distance between the GP and the drain is small as compared with the channel length. Therefore, if the GP is placed in the substrate (GPS), the buried oxide (BOX) thickness should be kept as small as possible which, however, results in an increased subthreshold slope. As a result, for sub-100-nm channel lengths, it is not possible to… CONTINUE READING

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