The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process

  title={The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process},
  author={Jun-Seok Ha and S. W. Lee and Hyun-Jae Lee and Lee Hyo-Jong and S. H. Lee and Hiroki Goto and Tomoaki Kato and Kosuke Fujii and M. W. Cho and Takafumi Yao},
  journal={IEEE Photonics Technology Letters},
Vertical light-emitting diodes (LEDs) were successfully fabricated by a chemical lift-off process using a selectively etchable CrN buffer layer. The novel CrN metallic layer worked well as a buffer layer for growth of the GaN LED and was etched out clearly during selective chemical etching. The vertical LED by chemical lift-off showed very good current-voltage performance with low series resistance of 0.65 Omega and low operated voltage of 3.11 V at 350 mA. Also, this device could be operated… CONTINUE READING
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Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based lightemitting diodes

  • Y. S. Wu, J.-H. Cheng, W. C. Peng, H. Ouyang
  • Appl. Phys. Lett., vol. 90, p. 251110, 2007.
  • 2007
1 Excerpt

Thermal management considerations for visible LEDs in general illumination and signage applications

  • R. Saffa
  • LED J., vol. Jan./Feb., pp. 4–5, 2007.
  • 2007
2 Excerpts

Novel buffer layer for the growth of GaN on c-sapphire

  • W. Lee, S. Lee, H. Goto, H. Ko, M. Cho, T. Yao
  • Phys. Stat. Sol. (C), vol. 3, no. 6, pp. 1388…
  • 2006
1 Excerpt

Photonic crystal laser lift-off GaN light-emitting diodes

  • A. David, T. Fujii, +4 authors C. Weisbuch
  • Appl. Phys. Lett., vol. 88, no. 13, p. 133514…
  • 2006
2 Excerpts

Vertical AlGaN deep ultraviolet light emitting diode emitting at 322 nm fabricated by the laser lift-off technique

  • K. Kawasaki, C. Koike, Y. Aoyagi, M. Takeuchi
  • Appl. Phys. Lett., vol. 89, p. 261114, 2006.
  • 2006
2 Excerpts

Use of patterned laser liftoff process and electroplating nickel layer for the fabrication of vertical-structured gan-based light-emitting diodes

  • S.-J. Wang, K.-M. Uang, +5 authors B.-W. Liou
  • Appl. Phys. Lett., vol. 87, p. 011111, 2005.
  • 2005
1 Excerpt

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