The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process

@article{Ha2008TheFO,
  title={The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process},
  author={Jun-Seok Ha and S. W. Lee and Hyun-Jae Lee and Lee Hyo-Jong and S. H. Lee and Hiroki Goto and Tomoaki Kato and Kosuke Fujii and M. W. Cho and Takafumi Yao},
  journal={IEEE Photonics Technology Letters},
  year={2008},
  volume={20},
  pages={175-177}
}
Vertical light-emitting diodes (LEDs) were successfully fabricated by a chemical lift-off process using a selectively etchable CrN buffer layer. The novel CrN metallic layer worked well as a buffer layer for growth of the GaN LED and was etched out clearly during selective chemical etching. The vertical LED by chemical lift-off showed very good current-voltage performance with low series resistance of 0.65 Omega and low operated voltage of 3.11 V at 350 mA. Also, this device could be operated… CONTINUE READING
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