The Evolution of Silicon Wafer Cleaning Technology

  title={The Evolution of Silicon Wafer Cleaning Technology},
  author={Werner Kern},
  journal={Journal of The Electrochemical Society},
  • W. Kern
  • Published 1 June 1990
  • Engineering
  • Journal of The Electrochemical Society
The purity of wafer surfaces is an essential requisite for the successful fabrication of VLSI and ULSI silicon circuits. Wafer cleaning chemistry has remained essentially unchanged in the past 25 years and is based on hot alkaline and acidic hydrogen peroxide solutions, a process known as "RCA Standard Clean." This is still the primary method used in the industry. What has changed is its implementation with optimized equipment: from simple immersion to centrifugal spraying, megasonic techniques… 
Silicon wafers preparation and properties
  • M. Tilli
  • Engineering, Materials Science
  • 2010
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Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution
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Study of thickness and uniformity of oxide passivation with DI-O3 on silicon substrate for electronic and photonic applications
Since the beginning of semiconductor fabrication technology evolution, clean and passivated substrate surface is one of the prime requirements for fabrication of Electronic and optoelectronic device
UV Laser Cleaning
High temperature oxidation pre-treatment of textured c-Si wafers passivated by a-Si:H


Growth and properties of LPCVD titanium nitride as a diffusion barrier for silicon device technology
Chemical vapor deposition has been used to deposit titanium nitride (TiN) on silicon wafers at low pressures in a cold-wall single-wafer reactor. Experiments are reported for pressures in the range
The Chemistry of the Semiconductor Industry
Overview. Semiconductor silicon. Group III-V compounds. Group II-VI semiconductors. Chemical vapour deposition. Plasma-enhanced chemical vapour deposition. Metal-organic vapour phase epitaxy.
Thin Film Processes
J.L. Vossen and W. Kern, Introduction. S.M. Rossnagel, Glow Discharge Plasma and Sources for Etching and Deposition. C.V. Deshpandey and R.F. Bunshah, Evaporation Processes. P.P. Chow, Molecular Beam
this is a summary of work reported by D.-B
  • 1989
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Redistribution subject to ECS terms of use
  • CC License in place (see abstract)
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  • 911, The Electrochemical Society Extended Abstracts, Vol. 76-2, Las Vegas, NV, Oct. 17-22,
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u Hiratsuka, and T
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