The Effects of Double-Epilayer Structure on Threshold Voltage of Ultralow Voltage Trench Power MOSFET Devices

@article{Wang2007TheEO,
  title={The Effects of Double-Epilayer Structure on Threshold Voltage of Ultralow Voltage Trench Power MOSFET Devices},
  author={Qi Wang and Minhua Li and Jessica Sharp and Anila Sushma Challa},
  journal={IEEE Transactions on Electron Devices},
  year={2007},
  volume={54},
  pages={833-839}
}
The effect of double-epilayer structure on threshold voltage (V <sub>th</sub>) has been investigated for p-channel low-voltage (V<sub>ds </sub>) trench power MOSFET devices. By fabricating the device in an intrinsic epilayer grown on the top of a highly doped epilayer, the sensitivity of V<sub>th</sub> to the epidoping concentration has been significantly reduced. This reduction is attributed to the fact that in the double-epilayer structure, the compensation effect of epidoping concentration… CONTINUE READING

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