The Effects of Double-Epilayer Structure on Threshold Voltage of Ultralow Voltage Trench Power MOSFET Devices

@article{Wang2007TheEO,
  title={The Effects of Double-Epilayer Structure on Threshold Voltage of Ultralow Voltage Trench Power MOSFET Devices},
  author={Q. Wang and Minhua Li and J. Sharp and A. Challa},
  journal={IEEE Transactions on Electron Devices},
  year={2007},
  volume={54},
  pages={833-839}
}
  • Q. Wang, Minhua Li, +1 author A. Challa
  • Published 2007
  • Materials Science
  • IEEE Transactions on Electron Devices
  • The effect of double-epilayer structure on threshold voltage (V <sub>th</sub>) has been investigated for p-channel low-voltage (V<sub>ds </sub>) trench power MOSFET devices. By fabricating the device in an intrinsic epilayer grown on the top of a highly doped epilayer, the sensitivity of V<sub>th</sub> to the epidoping concentration has been significantly reduced. This reduction is attributed to the fact that in the double-epilayer structure, the compensation effect of epidoping concentration… CONTINUE READING
    10 Citations
    Double-Epilayer Structure for Low Drain Voltage Rating n-Channel Power Trench MOSFET Devices
    • 6
    150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers
    Investigation of performance optimized power trench MOSFETs With Double-Epilayer
    • Xizhi Su, Q. Feng
    • Engineering
    • 2011 International Conference on Advanced Power System Automation and Protection
    • 2011
    • 1
    A Novel Sub-20V Power MOSFET with Improved On-Resistance and Threshold Variation
    • J. Ng, J. Sin, L. Guan
    • Materials Science
    • 2008 20th International Symposium on Power Semiconductor Devices and IC's
    • 2008
    • 5
    • Highly Influenced
    A Novel Planar Power MOSFET With Laterally Uniform Body and Ion-Implanted JFET Region
    • 12
    • Highly Influenced
    A laser annealing process for high-performance power MOSFETs
    • Y. Chen, T. Noguchi
    • Materials Science
    • 2014 International Workshop on Junction Technology (IWJT)
    • 2014
    • 2
    An Application of Laser Annealing Process in Low-Voltage Power MOSFETs
    • 1
    Novel 3-D IC technology

    References

    SHOWING 1-10 OF 10 REFERENCES
    30V new fine trench MOSFET with ultra low on-resistance
    • S. Ono, Y. Kawaguchi, A. Nakagawa
    • Materials Science
    • ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.
    • 2003
    • 24
    • PDF
    Industrialisation of Resurf Stepped Oxide Technology for Power Transistors
    • 39
    Power MOSFET technology
    • 10
    Power MOSFETs: Theory and Applications
    • 242
    • PDF
    Device Electronics for Integrated Circuits
    • 1,378
    • PDF
    PHYSICS OF SEMICONDUCTOR DEVICES
    • 3,893
    • PDF
    High power ratings extend VMOS FET ’ domination
    • 1976
    and A
    • Nakagawa, “30 V new fine trench MOSFET with ultra low on-resistance,” in Proc. ISPSD, Apr. 14–17
    • 2003
    and L
    • Shaeffer, “High power ratings extend VMOS FET’ domination,” Electronics, vol. 51, no. 13, pp. 105–112
    • 1978
    and R
    • Van Dalen, “Industrialization of resurf stepped oxide technology for power transistors,” in Proc. 18th Int. Symp. Power Semicond. Devices and IC’s, Jun. 4–8
    • 2006