The Effect of the Deposition Temperature and la Doping Concentration on the Properties of the (Pb, La)$\textrm{TiO}_3$ Films Deposited by ECR PECVD

@inproceedings{Jeong1997TheEO,
  title={The Effect of the Deposition Temperature and la Doping Concentration on the Properties of the (Pb, La)\$\textrm\{TiO\}_3\$ Films Deposited by ECR PECVD},
  author={Seong-Ung Jeong and Hye-Ryeon Park and Won-Jong Lee},
  year={1997}
}
Perovskite lanthanum doped lead titanate ( or PLT) thin films were successfully fabricated on Pt/TijSiO.iSi substrates at the temperatures as low as by eleclron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVII). Since the volatilities of the MC sources arid oxide molecules (especially Ph oxide) increased with increasing deposition temperature, the film deposition rate and the (I'b + La)/'Ti ratio decreased Stoichiometric perovskite PL'T films with good dielectric and… CONTINUE READING

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