The Effect of the Active Layer Thickness on the Negative Bias Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors

@article{Kong2011TheEO,
  title={The Effect of the Active Layer Thickness on the Negative Bias Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors},
  author={Dongsik Kong and Hyun-Kwang Jung and Yongsik Kim and Minkyung Bae and Yong Woo Jeon and SungChul Kim and Dong Myong Kim},
  journal={IEEE Electron Device Letters},
  year={2011},
  volume={32},
  pages={1388-1390}
}
The effect of the active layer thickness (<i>T</i><sub>IGZO</sub>) on the negative bias stress (NBS)-induced threshold voltage shift (Δ<i>VT</i>) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of-states (DOS) model. The NBS-induced negative Δ<i>VT</i> in a-IGZO TFT with a thinner <i>T</i><sub>IGZO</sub> is larger than that with a thicker <i>T</i><sub>IGZO</sub>. Based on the simulation result with the subgap DOS model, it is… CONTINUE READING